Brown University School of Engineering

“Electronics and Photonics Seminar” Phase-change memory and electrothermal effects

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Monday, May 07, 2012 2:00pm - 3:00pm

Division of Engineering “Electronics and Photonics Seminar” Phase-change memory and electrothermal effects Prof. Ali Gokirmak Electrical and Computer Engineering University of Connecticut Abstract: The advancements of CMOS processing technologies has enabled scaling of flash memory to < 20 nm minimum feature sizes, close to the physical limit of charge based non-volatile storage. There is a growing industrial interest in non-charge based high-performance non-volatile memories such as phase change memory (PCM) where the information is stored in the resistive state of the device. These devices are reversibly switched between the two states by melting and freezing the material in short time durations as current (~1–10 MA/cm2) is passed through them. PCM is an interesting device for fundamental studies due to extreme thermal profiles (~10 K/nm) forming in short time-scales in a device geometry that includes metal-semiconductor junctions. This seminar will summarize the interesting electro-thermal effects that come into play and their impact on device design. Biography: Ali Gokirmak has received his BS degrees in Electrical Engineering and Physics from University of Maryland at College Park in 1998 and received his PhD in Electrical and Computer Engineering from Cornell University in 2005. He has served as a postdoctoral research associate at Cornell for one year in the same group. He is an assistant professor of Electrical & Computer Engineering at University of Connecticut since 2006. His research is mainly focuses on electrical characterization and computational evaluation of nanoelectronic devices, thermoelectric effects, crystallization and phase change memory. His research portfolio is supported by NSF and Department of Energy Office of Basic Energy Sciences. He has received the NSF CAREER award in 2012. Monday, May 7 2:00 pm in Barus & Holley 190